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KFG1G1612M-DEB5 - FLASH MEMORY

General Description

5.

Added CE don’t care state for Asynch Write, Load, Program, and Block Erase timing diagram 1.

Corrected Errata 2.

Key Features

  • including:.
  • A BootRAM and bootloader.
  • Two independent bi-directional 2KB DataRAM buffers.
  • A High-Speed x16 Host Interface.
  • On-chip Error Correction.
  • On-chip NOR interface controller This on-chip integration enables system designers to reduce external system logic and use high-density NAND Flash in.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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OneNAND4G(KFW4G16Q2M-DEB5) OneNAND2G(KFH2G16Q2M-DEB5) OneNAND1G(KFG1G16Q2M-DEB5) FLASH MEMORY www.DataSheet4U.com OneNANDTM Specification Density 1Gb 2Gb 4Gb Part No. KFG1G16Q2M-DEB5 KFH2G16Q2M-DEB5 KFW4G16Q2M-DEB5 VCC(core & IO) 1.8V(1.7V~1.95V) 1.8V(1.7V~1.95V) 1.8V(1.7V~1.95V) Temperature Extended Extended Extended PKG 63FBGA(LF) 63FBGA(LF) 63FBGA(LF) Version: Ver. 1.1 Date: July 20, 2005 1 OneNAND4G(KFW4G16Q2M-DEB5) OneNAND2G(KFH2G16Q2M-DEB5) OneNAND1G(KFG1G16Q2M-DEB5) FLASH MEMORY 1.0 INTRODUCTION This specification contains information about the Samsung Electronics Company OneNAND™‚ Flash memory product family. Section 1.0 includes a general overview, revision history, and product ordering information. Section 2.0 describes the OneNAND device. Section 3.